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DMG4800LK3
30
30
25
V GS = 4.5V
V GS = 4.0V
25
V DS = 5.0V
V GS = 3.5V
V GS = 3.0V
20
15
20
15
10
V GS = 2.5V
10
T A = 150°C
T A = 125°C
5
V GS = 1.8V
V GS = 2.0V
5
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5 1 1.5
2
0
0
0.5 1 1.5 2 2.5 3 3.5
4
1
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
0.05
V GS , GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
0.1
V GS = 2.5V
V GS = 4.5V
0.04
0.03
0.02
0.01
T A = 150°C
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
V GS = 4.5V
0.01
0
0
5
10 15 20 25
30
0
5
10 15 20 25 30
I D , DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I D , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.6
1.4
1.2
V GS = 4.5A
I D = 5A
V GS = 10A
I D = 10A
0.05
0.04
0.03
V GS = 4.5A
1.0
0.8
0.02
0.01
I D = 5A
V GS = 10A
I D = 10A
0.6
-50
-25 0 25 50 75 100 125 150
0
-50
-25
0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
Fig. 5 On-Resistance Variation with Temperature
T A AMBIENT TEMPERATURE (°C)
Fig. 6 Typical Static Drain-Source On-State Resistance
vs. Ambient Temperature
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
3 of 6
www.diodes.com
November 2012
? Diodes Incorporated
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